Aluminum interconnects for ULSI: The CVD route. Recent progress in depositing copper-doped aluminum films is reviewed

Semiconductor International

Volumn 19, Issue 12, 1996, Pages 127-136

  Kaloyeros, Alain E ^a   Thomas, Michael E ^b   Norman, John ^c   Sullivan, John J ^d  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c Schumacher   (United States)

^d MKS Instruments   (United States)

Author keywords

Aluminum CVD; Multi level metal; Via fill

Indexed keywords

EID: 0344028704     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, Calif., 1994, p. 94.
2. S.P. Murarka, Metallization: Theory and Practice for VLSI and ULSI, Butterworth-Heinemann, Boston, 1993.
3. P. Singer, Semiconductor International, 1994, p. 57.
4. See, a: C.F. Powell, J.H. Oxley, J.M. Blocher, Jr., Vapor Deposition, Wiley, New York, N.Y., 1966, p. 27;
5. b: C.F. Wan, K.E. Spear, Proceedings of the Seventh International Conference on Chemical Vapor Deposition,
6. E.N. Tauber, The Electrochem. Soc., Pennington, N. J. ,Vol. 75-77, 1977, p. 47;
7. c: H.J. Cooke, et al, Solid State Technology, 1982, p. 62.
8. R.A. Levy, et al, J. Electrochem. Soc., 1985, p. 457;
9. R.A. Levy, M.L. Green, P.K. Gallagher, J. Electrochem. Soc., 1985, p. 457;
10. V.H. Houlding, D.E. Coorn, Proceedings of the Workshop on Tungsten and Other Advanced Metals for ULSI Applications 1990, Pittsburgh, 1991, p. 203.
11. See,a: A.E. Kaloyeros, "Emerging Aluminum CVD Processes for IC Metallization," Workshop on, Santa Clara, Calif., Sept. 1995.
12. b. W.W. Lee, "Al Deposition at Low temperature by Hydrogen Atom Assisted CVD," Conference on Advanced Metallization and Interconnect Systems for ULSI Applications, Portland, Ore., Oct. 1995.
13. R. Fiordalice, et al. Digest of Technical Papers of the 1996 Symposium on VLSI Technology, The IEElE, San Francisco, Calif., 1996, p. 42.
14. G.A. Dixit, et al., International Electron Devices Meeting 1995, IEEE, Washington D.C., 1995, p. 1001.
15. K. Masu, et al., Digest of Technical Papers of the 1996 Symposium on VLSI Technology, IEEE, San Francisco, Calif., 1996, p. 44.
16. E. Kondoh, et al., J. Electrochem. Soc., 1994, p. 3494.