Computer simulation of the growth of heterostructure systems

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 1043-1049

  Djafari Rouhani, M ^a,b   Malek, R ^a   Kersulis, S ^c   Mitin, V ^c  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c Wayne State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343948706     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00147-4     Document Type: Article

References (22)

1. Shen, X.Q., Tanaka, M. and Nishinaga, T., Resharpening effect of AlAs and fabrication of quantumwires on V-grooved substrates by molecular beam epitaxy, J. Cryst. Growth, 127 (1993) 932.
2. 0.55As on (111)A-(001) V-grooved substrates, J. Cryst. Growth, 135 (1994) 85.
3. Hoenk, M.E., Chen, H.Z., Yariv, A., Morkoc, H. and Vahala, K.J., Cathodoluminescence measurements of an orientation dependent aluminium concentration in AlGaAs epilayers grown by mo-lecular beam epitaxy on a non planar substrate, Appl. Phys. Lett., 54 (1989) 1347.
4. Hoenk, M.E., Nieh, C.V., Chen, H.Z. and Vahala, K.J., Compositional modulation in AlGaAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a non planar substrate, Appl Phys. Lett., 55 (1989) 53.
5. Hata, M., Isu, T., Watanabe, A. and Katayarna, Y., Distribution of growth rates on patterned surfaces measured by scanning microprobe reflection high energy electron diffraction, J. Vac. Sci. Tech., B8 (1990) 692.
6. Hata, M., Isu, T., Watanabe, A. and Katayama, Y., Real-time observation of molecular beam epitaxy growth on mesa-etched GaAs substrates by scanning microprobe reflection high-energy electron diffraction, Appl. Phys. Lett., 56 (1990) 2542.
7. Rohr, T., Walther, M., Rochus, S., Bohm, G., Klein, W., Trankle, G. and Weimann, G., MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates, J. Mat. Sci. Engng, B21 (1993) 153.
8. Walther, M., Rohr, T., Bohm, G., Trankle, G. and Weimann, G., Facetted MBE growth of (GaAl)As on RIE patterned surfaces, J. Cryst. Growth, 127 (1993) 1045.
9. Sunamara, H., Usami, N. and Shiraki, Y., Island formation during growth of Ge on Si(001): a study using photoluminescence spectroscopy, Appl. Phys. Lett., 66 (1995) 3024.
10. Christiansen, S., Albrecht, M. and Strunk, H.P., Strained state of Ge(Si) islands on Si: finite element calculations and comparison to convergent beam electron diffraction measurements, Appl. Phys. Lett., 64 (1994) 3617.
11. Guha, S., Madhukar, A. and Rajkumar, K.C., Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxial growth of highly strained InGaAs on GaAs, Appl. Phys. Lett., 57 (1990) 2110.
12. Madhukar, A., Xie, Q., Chen, P. and Konkar, A., Nature of strained InAs-three dimensional island formation and distribution on GaAs(100), Appl. Phys. Lett., 64 (1994) 2727.
13. Mirecki Millunchik, J. and Barnett, S.A., Suppression of strain relaxation and roughening of InGaAs on GaAs using an ion beam assisted molecular beam epitaxy, Appl. Phys. Lett., 65 (1994) 1136.
14. Nötzel, R., Temmyo, J., Kozen, A. and Tamamura, T., Self organisation of strained GaInAs microstructures on InP(311) substrates grown by metalorganic vapor phase epitaxy, Appl. Phys. Lett., 66 (1995) 2525.
15. Eymery, J., Tatarenko, S., Bouchet, N. and Saminadayar, K., Study of the first stage relaxation in ZnTe/ (001) CdTe, Appl. Phys. Lett., 64 (1994) 3631.
16. Yao, T., Nakao, H., Kawanami, H. and Toba, R., Lattice strain relaxation at the initial stages of heteroepitaxy of GaAs on (100)Si by molecular beam epitaxy, J. Crystal Growth, 95 (1989) 107.
17. Patriarche, G., Rivière, J.P. and Castaing, J., Misfit accomodation and dislocations in heteroepitaxial semiconductor layers: II-VI compounds on GaAs, J. Physique France III, 3 (1993) 1189.
18. Grilhé, J., Surface instabilities and dislocation formation at free surfaces of stressed solids, Europhys. Lett., 23 (1993) 141.
19. Martin, R.M., Elastic properties of ZnS structure semiconductors, Phys. Rev., B1 (1970) 4005.
20. Stillinger, F. and Weber, T., Computer simulation of local order in condensed phases of silicon, Phys. Rev., B31 (1985) 5262.
21. Djafan Rouhani, M., Gué, A.M., Malek, R., Bouyssou, G. and Estève, D., Surface morphology due to enhanced migration in heteroepitaxial growth of compound semiconductors, J. Mat. Sci. Engng, B37 (1996) 25.
22. Ichikawa, M. and Doi, T., Observation of Si(111) surface topography changes during Si molecular beam epitaxial growth using microprobe reflection high energy electron diffraction, Appl. Phys. Lett., 50 (1987) 1141.