Surface morphology due to enhanced migration in heteroepitaxial growth of compound semiconductors

Materials Science and Engineering B

Volumn 37, Issue 1-3, 1996, Pages 25-29

  Djafari Rouhani, M ^a,b   Gue A M ^a   Malek, R ^a   Bouyssou, G ^a   Esteve D ^a  

^a LAAS CNRS   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

Heteroepitaxial growth; Monte Carlo technique; Semiconductors; Valence force field approximation

Indexed keywords

EID: 0041536491     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01452-7     Document Type: Article

References (18)

1. W. Faschinger and H. Sitter, J. Cryst. Growth, 99 (1990) 566.
2. R. Sporken, M.D. Lange, S. Sivananthan and J.P. Faurie, Appl. Phys. Lett., 59 (1991) 81.
3. S. Guha, A. Madhukar and K.C. Rajkumar, Appl. Phys. Lett., 57 (1990) 2110.
4. A. Madhukar, Q. Xie, P. Chen and A. Konkar, Appl. Phys. Lett., 64 (1994) 2727.
5. G. Gilmer, MRS Symp. Proc., in press.
6. M. Kitabatake, M. Deguchi and T. Hiaro, J. Appl. Phys., 74 (1993) 4438.
7. G. Gilmer, Mater. Sci. Eng., B37 (1995).
8. M. Kitabatake and J.E. Greene, J. Appl. Phys., 73 (1993) 3183.
9. F.K. Le Goues, M. Copel and R.M. Tromp, Phys. Rev. B, 42 (1993) 11690.
10. S. Higuchi and Y. Nakanashi, J. Appl. Phys., 71 (1992) 4277.
11. G. Patriarche, J.P. Rivière and J. Castaing, J. Phys. France III, 3 (1993) 1189.
12. M. Djafari Rouhani, M. Sahlaoui, A.M. Gué and D. Estève, J. Mater. Sci. Eng. B, 28 (1994) 200.
13. R.M. Martin, Phys. Rev. B, 1 (1970) 4005.
14. F. Stillinger and T. Weber, Phys. Rev. B, 31 (1985) 5262.
15. M. Djafari Rouhani, A.M. Gué, M. Sahlaoui and D. Estève, Surf. Sci., 276 (1992) 109.
16. F.F. Abraham and G.M. White, J. Appl. Phys., 41 (1970) 1841.
17. M. Djafari Rouhani, M. Laroussi, A. Amrani and D. Estève, J. Cryst. Growth, 101 (1990) 122.
18. M. Djafari Rouhani, N. Fazouan, A.M. Gué and D. Estève, Appl. Surf. Sci., 63 (1993) 273.