Optimum growth conditions of CdS thin films grown on GaAs(111)B by MBE

Shinku/Journal of the Vacuum Society of Japan

Volumn 43, Issue 3, 2000, Pages 284-287

  Shono, Yoshihiko ^a   Takashi, Oka ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; SURFACES; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYER; CADMIUM SULFIDE; MOLECULAR BEAM INTENSITY; X RAY DIFFRACTION ROCKING CURVE;

THIN FILMS;

EID: 0343878765     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.43.284     Document Type: Article

References (7)

1. D. A. Cusano: Physics and Chemistry of II-VI Compounds, (ed. by M. Aven and J. S. Prener), (North-Holland Pub., Amsterdam, 1967) Chap. 14, p. 709.
2. R. E. Honig and D. A. Kramer: RCA Rev., 30 (1969) 285.
3. K. Pinardi, Uma Jain, S. C. Jain, H. E. Maes and R. Van Overstraeten: J. Appl. Phys., 83 (1998) 4724.
4. Ivan V. Markov: Crystal Growth for Beginners, (World Scientific, London, 1995) Chap. 2, p. 63.
5. J. J. Hopfield and D. G. Thomas: Phys. Rev., 128 (1962) 2135.