ArF lasers for production of semiconductor devices with CD < 0.15 μm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 1014-1020

  Duffey, Thomas P ^a   Embree, Todd J ^a   Ishihara, Toshihiko ^a   Morton, Richard G ^a   Partlo, William N ^a   Watson, Tom A ^a   Sandstrom, Richard L ^a  

^a CYMER INC   (United States)

Author keywords

193 nm; ArF excimer laser; DUV lithography; Line narrowing

Indexed keywords

EXCIMER LASERS; GAS DISCHARGE TUBES; GAS LASERS; KRYPTON; LASERS; LITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR LASERS;

193 NM; ARF EXCIMER LASER; ARF LASERS; BURST MODES; CORE TECHNOLOGIES; DISCHARGE CHAMBERS; DUV LITHOGRAPHY; KRF LASERS; LINE-NARROWING;

PULSED LASER APPLICATIONS;

EID: 0343856205     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310731     Document Type: Conference Paper

References (6)

1. T. Farrell, R. Nunes, D. Samuels, et al, "The challenges of 1 Giga-bit DRAM development when using optical lithography", Proc. SPIE, vol. 3051, pp. 333-341, 1997.
2. M. Levenson, "Wavefront engineering from 500 nm to 100 nm CD", Ibid, pp. 2-13.
3. Richard Sandstrom, "Performance data for a sub-1 pm line-narrowed argon fluoride laser for DUV lithography", Proc. of the SEMI Technology Symposium '97, printed separately, 1997.
4. U. Stamm, J. Kleinschmidt, P. Heist, I. Bragin, R. Patzel, D. Basting, "ArF excimer laser for 193 nm lithography", Proc. SPIE, vol. 3051, pp.868-873, 1997.
5. Richard Schenker, F. Piao, W.G. Oldham, "Durability of experimental fused silicas to 193-nm-induced compaction,", Ibid, pp.44-45.
6. nd Symposium on 193 nm Lithography, Colorado Springs, CO, 1997.