Structural, chemical and optical characterisation of Ge-doped SiO2 glass films grown by magnetron rf-sputtering

Journal of Materials Processing Technology

Volumn 92-93, Issue , 1999, Pages 269-273

  Rolo, A G ^a   Conde, O ^b   Gomes, M J M ^a   Dos Santos, M P ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b UNIVERSITY OF LISBON   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FUSED SILICA; GERMANIUM; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; OPTICAL VARIABLES MEASUREMENT; QUANTUM THEORY; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

ABSORPTION BAND; OPTICAL TRANSMISSION SPECTRA; QUANTUM CONFINEMENT EFFECTS; QUANTUM SIZE EFFECT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0343603509     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-0136(99)00165-X     Document Type: Article

References (19)

1. A.P. Alivisatos, MRS Bull. XX(8) (1995) 23 and references therein.
2. Borrelli N.F., Hall D.W., Holland H.J., Smith D.W. J. Appl. Phys. 61:1987;5399.
3. R. Reisfeld, in: B. Di Bartolo (Ed.), Optical Properties of Excited States in Solids, vol. 301, NATO ASI Series B: Physics, Plenum Press, New York, USA, 1992, p. 601.
4. U. Woggon, Optical Properties of Semiconductor Quantum Dots, Springer Tracts in Modern Physics Series, Springer, Berlin, Germany, 1996.
5. L. Brus, Appl. Phys. A 53 (1991) 465 and references therein.
6. H. Haug, S.W. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors, World Scientific, Singapore, 1990, p. 332.
7. Y. Kayanuma, Phys. Rev. B 38 (1988) 9772 and references therein.
8. Movtchan I.A., Dreyfus R.W., Marine W., Sentis M., Autric M., Le Lay G., Merk N. Thin Solid Films. 255:1995;286.
9. Zhu J.G., White C.W., Budai J.D., Withrow S.P., Chen Y. J. Appl. Phys. 78(7):1995;4386.
10. Y. Masumoto, in: P.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu, Y. Aoyagi (Eds.), Microcrystalline Semiconductors: Materials Science and Devices, vol. 283, 15th ed., MRS, Proc. Symp., Boston, MA, USA, 1993.
11. Heath J.R., Shiang J.J., Alivisatos A.P. J. Chem. Phys. 101(2):1994;1607.
12. Dutta A.K. Appl. Phys. Lett. 68(9):1996;1189.
13. M. Yang, K.V. Shcheglov, M.L. Brongersma, A. Polman, H.A. Atwater, in: Proc. Symp. of the Mat. Res. Soc., vol. 358, 1995, p. 181.
14. U. Woggon, Optical Properties of Semiconductor Quantum Dots, vol. 136, ch. 9, Springer Tracts in Modern Physics Series, Springer, 1996.
15. Maeda Y., Tsukamoto N., Yazawa Y., Kanemitsu Y., Masumoto Y. Appl. Phys. Lett. 59:1991;3168.
16. Tabelas JCPDS-ICDD, PDF-2 Sets 1-42 database, 1992.
17. B.D. Cullity, Elements of X-ray Diffraction, 2nd ed., Addison Wesley, Reading, MA, USA, 1978, p. 102.
18. dos Santos D.R., Torriani I.L. Solid State Commun. 85(4):1993;307.
19. Zi J., Buscher H., Falter C., Ludwig W., Zhang K., Xie X. Appl. Phys. Lett. 69(2):1996;200.