Impact ionization breakdown of n-GaAs in high magnetic fields

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1084-1087

  Samuilov V, A ^a   Ksenevich, K V ^a   Remenyi, G ^b   Kiss, G ^c   Podor B ^c  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; IONIZATION OF SOLIDS; MAGNETIC FIELDS; MAGNETORESISTANCE; THRESHOLD VOLTAGE;

HOPPING CONDUCTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0343517606     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/313     Document Type: Article

References (17)

1. Oliver D J 1962 Phys. Rev. 127 1045-52
2. Reynolds R A 1968 Solid-State Electron. 11 385-90
3. Poehler T O 1971 Phys. Rev. B 4 1223-9
4. Shklovskii B I and Efros A L 1984 Electronic Properties of Doped Semiconductors (Springer Series in Solid State Sciences 45) (Berlin: Springer)
5. Lukashevich M G, Bogershausen M and Micklitz H 1994 Phys. Status Solidi a 144 377-82
6. Dargys A, Česna A and Kundrotas J 1992 Semicond. Sci. Technol. 7 210-17
7. Kundrotas J, Dargys A and Česna A 1996 Semicond. Sci. Technol. 11 692-6
8. Spangler J, Finger B, Wimmer C, Eberle W and Prettl W 1994 Semicond. Sci. Technol. 9 373-8
9. Brandtl A, Kröninger W, Prettl W and Obermair G 1990 Phys. Rev. Lett. 64 212-15
10. Brandtl A and Prettl W 1991 Phys. Rev. Lett. 66 3044-7
11. Brandtl A, Geisel T and Prettl W 1987 Europhys. Lett. 3 401-6
12. Spangler J, Brandl A and Prettl W 1989 Appl. Phys. A 48 143-7
13. Kittel A, Rau U, Peinke J, Clauss W, Bayerbach M and Parisi J 1990 Phys. Lett. A 147 229-33
14. Samuilov V A, Kiss G, Ksenevich V K, Remenyi G and Pödör B 1998 Physica B 256-258 654-8
15. Mikoshiba N 1962 Phys. Rev. 127 1962
16. Kaufman L A and Neuringer N J 1970 Phys. Rev. B 2 1840-6
17. Sladek R J 1957 J. Phys. Chem. Solids 5 157-70