SOI wafers based on epitaxial technology

Solid State Technology

Volumn 43, Issue 6, 2000, Pages 88-90,-92

  Sakaguchi, Kiyofumi ^a   Yonehara, Takao ^a  

^a CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COST EFFECTIVENESS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; VAPOR PHASE EPITAXY;

CRYSTAL ORIGINATED PARTICLES; HYDROGEN ANNEALING PROCESS; WAFER JET SPLITTING PROCESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0343442494     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (7)

1. N. Sato, T. Yonehara, "Hydrogen Annealed Silicon-on-Insulator ," Appl. Phys. Lett., Vol. 65, p. 1924, 1994.
2. E. Suzuki, et al., "Highly Suppressed Threshold Voltage Roll-off Characteristics of the 4 nm-thick SOI N-MOSFETs in the 40-135nm Gate Length Regime," Proc. 9th Int. ECS SOI Symp., Vol. 99-3, pp. 260-265, 1999.
3. Y. Arimoto, "Structure and Applications of SOI," Surface Science Tech., p. 447, 1996.
4. K. Sakaguchi, et al., "ELTRAN by Splitting Porous Si Layers," Proc. 9th ECS SOI Symp., Vol. 99-3, p. 117, 1999.
5. K. Ohmi, et al., "Water let Splitting of Thin Porous Si for ELTRAN," 1999 Int. Conf. Solid State Devices and Materials, p. 354, 1999.
6. K. Sakaguchi, et al., "Water let Splitting in Stress-Controlled Porous Si," Proc. 1999 IEEE Int. SOI Conf., p. 110, 1999.
7. K. Yanagita, et al., "An Application of the Water Jet for Splitting Bonded Wafers," Proc. Int. Symp. on New Applications of Water Jet Technology, WJTSJ, p. 137, 1999.