Morphological study of GaAs grown by periodic supply epitaxy on (111) B substrates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 954-957

  Allegretti, F E ^a   Roberts, C ^a   Neave, J H ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343373784     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580786     Document Type: Article

References (13)

1. 1S. Ando, N. Kobayashi, and H. Ando, Jpn. J. Appl. Phys. 2, 35, L411 (1996).
2. T. Sogawa, S. Ando, and H. Kanbe, Jpn. J. Appl. Phys. 1, 34, 4405 (1995).
3. H. Heinecke, A. Milde, B. Baur, and R. Matz, Semicond. Sci. Technol. 8, 1023 (1993).
4. M. Ida, N. Shigekawa, T. Furuta, H. Ito, and T. Kobayashi, J. Crys. Growth 158, 437 (1996).
5. M. Tsuji, K. Makita, T. Takeuchi, and K. Taguchi, J. Cryst. Growth 162, 25 (1996).
6. F. E. Allegretti and T. Nishinaga, J. Cryst. Growth 156, 1 (1995).
7. F. E. Allegretti, M. Inoue, and T. Nishinaga, J. Cryst. Growth 146, 354 (1995).
8. Y. Nomura, Y. Morishita, S. Goto, Y. Katayama, and T. Isu, Appl. Phys. Lett. 64, 1123 (1994).
9. S. Nilsson, E. van Gieson, D. J. Arent, H. P. Meier, W. Walter, and T. Forster, Appl. Phys. Lett. 55, 972 (1989).
10. P. Dominguez and F. Briones, Microelectron. J. 26, 751 (1995).
11. M. Inoue, F. E. Allegretti, and T. Nishinaga, 41st National Conference of the Applied Physics Society of Japan, 1994.
12. B. A. Joyce, X. M. Zhang, J. H. Neave, P. N. Fawcett, M. R. Fahy, K. Sato, and I. Kamiya, Scanning Microsc. 8, 913 (1994).
13. T. Ide, A. Yamashita, and T. Mizutani, Surf. Sci. 287/288, 1013 (1993).