메뉴 건너뛰기




Volumn 19, Issue 5, 1996, Pages 88-96

Low k dielectrics: The search continues. Fluorinated oxides and polymers offer the potential to reduce the dielectric constant of on-chip insulators

(1)  Singer, Peter a  

a NONE

Author keywords

Fluorinated oxides; Intermetal dielectrics; Low k dielectrics

Indexed keywords


EID: 30844463428     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (52)

References (4)
  • 1
    • 0000212494 scopus 로고
    • Chasing the Promise of Faster Chips
    • November
    • P. Singer, "Chasing the Promise of Faster Chips," Semiconductor International, November 1994, p. 52.
    • (1994) Semiconductor International , pp. 52
    • Singer, P.1
  • 2
    • 2342545864 scopus 로고
    • Low ε Dielectrics: CVD Fluorinated Silicon Dioxides
    • May
    • R. Laxman, "Low ε Dielectrics: CVD Fluorinated Silicon Dioxides," Semiconductor International, May 1995, p. 71.
    • (1995) Semiconductor International , pp. 71
    • Laxman, R.1
  • 3
    • 30844472815 scopus 로고    scopus 로고
    • Spin-on Low k Dielectric Materials for Deep-Submicron Multilevel Interconnect Applications: Materials Properties and Integration
    • January
    • J. Leu et al., "Spin-on Low k Dielectric Materials for Deep-Submicron Multilevel Interconnect Applications: Materials Properties and Integration," Allied Signal PLANAR/Asia, January, 1996.
    • (1996) Allied Signal PLANAR/Asia
    • Leu, J.1
  • 4
    • 0029514583 scopus 로고
    • Unterminated Bonds in Parylene-N Films
    • December
    • X. Zhang et al., "Unterminated Bonds in Parylene-N Films," Semiconductor International, December 1995, p. 89.
    • (1995) Semiconductor International , pp. 89
    • Zhang, X.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.