Enhanced diffusion in nonstoichiometric AlAs/GaAs heterostructures

Defect and Diffusion Forum

Volumn 157-159, Issue , 1998, Pages 1-16

  Nolte, D D ^a   Lahiri, I ^a   Guersen, R ^b   Melloch, M R ^c   Woodall, J M ^c  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

^c Purdue University   (United States)

Author keywords

Anneal; Electroabsorption; Excess As; Excitons; Intermixing; LTG; Migration enthalpy; Multiple quantum wells; Photomodulation; Point defects; Roughening; Supersaturation; Transient enhanced diffusion; Vacancy

Indexed keywords

ARSENIC; CRYSTALS; DEFECTS; DIFFUSION; ENTHALPY; EXCITONS; HETEROJUNCTIONS; MIXING; POINT DEFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SUPERSATURATION; VACANCIES;

ANNEAL; ELECTROABSORPTION; INTERMIXING; LTG; MULTIPLE QUANTUM WELLS; PHOTO MODULATION; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0343251087     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.157-159.1     Document Type: Article

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