Nitrogen in ultra-thin gate oxides: its profile and functions

Solid-State Electronics

Volumn 43, Issue 11, 1999, Pages 1997-2003

  Chen, Shou Mian ^a   Ip, Suk Yin Flora ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); NITROGEN OXIDES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; THERMOOXIDATION;

NITRIDED OXIDE; OXIDE FILM; OXYNITRIDE; ULTRATHIN GATE OXIDES;

ULTRATHIN FILMS;

EID: 0343192304     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00166-5     Document Type: Article

References (8)

1. 2O/NO-based ultra-thin oxynitride gate dielectrics for CMOS ULSI applications. 4th Int. Conf. Solid-Sate IC Technol. 1995.
2. 2O grown oxides. IEEE Electron. Device Lett. 14:1993;179-181.
3. +-poly PMOSFETS VLSI Technol. Syst. Appl. 1997;182-187.
4. Hori T. Ultra-thin nitrided-oxide gate dielectrics prepared by RTP for ULSI applications. 5th Int. Conf. Adv. Thermal Proces. Semiconduct. RTP '97 :1997;16-20.
5. + poly MOS devices using remote PECVD top nitride deposition on thin gate oxides. IEEE Int. Reliabil. Phys. Symp. Proc.1998;70-75.
6. Wen J, Ma S, Zhang Y, Tung C, Chen S, Wang J. Determination of thin gate oxide thickness by electrical, optical and structure measurements. Asia-Pacific Surf. Interface Anal. Conf.1998.
7. 2O: the role of atomic oxygen. Appl. Phys. Lett. 66:1995;1492-1494.
8. 2O. Appl. Phys. Lett. 67:1995;374-376.