Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1997, Pages 182-187

  Kim, B Y ^a   Liu, I M ^a   Min, B W ^a   Luan, H F ^a   Gardner, M ^a   Fulford, J ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTING SILICON; SILICA;

BORON PENETRATION; GATE OXIDE RELIABILITY;

MOSFET DEVICES;

EID: 0030651007     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)