Automated lifetime monitoring for factory process control

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 709-717

  Lee, D ^a   Briggs, R ^a   Norton, T ^a   Parker, D ^a   Smith, F ^a   Tobin, S ^a   Welsch, J ^a   Case, F ^b   Mc Curdy, J ^b   Mitra, P ^b  

^a Lockheed Martin IR Imaging Systems   (United States)

^b Lockheed Martin Vought Systems   (United States)

Author keywords

Annealing; HgCdTe; Lifetime; Liquid phase epitaxy (LPE)

Indexed keywords

EID: 0343191247     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0041-3     Document Type: Article

References (10)

1. A.J. Brouns, T.R. Schimert, P. Mitra, F.C. Case, S.L. Barnes and Y.L. Tyan, Semicond. Sci. and Technol. 8, 928 (1993).
2. V.C. Lopes, A.J. Syllaios and M.C. Chen, Semicond. Sci. Technol. 8, 824 (1993).
3. R.D. Graft, F.F. Carlson, J.H. Dinah, P.R. Boyd and R.E. Longshore, J. Vac. Sci. Technol. A 1, 1696 (1983).
4. W.H. Wright, V.C. Lopes and A.J. Syllaios, SPIE Proc. 1107, (SPIE, 1989), p. 212.
5. K. Luke and Li-Jen Cheng, J. Appl. Phys. 61, 2282 (1987).
6. S.K. Ghandi, The Theory and Practice of Microelectronics (New York: John Wiley and Sons, 1968).
7. S. Borrello, M. Kinch and D. LaMont, Infrared Physics 17, 121 (1977).
8. M.A. Kinch, M.J. Brau and A. Simmons, J. Appl. Phys. 44, 1649 (1973).
9. M.C. Chen, L. Colombo, J.A. Dodge and J.H. Tegilgas, J. Electron. Mater. 24, 539 (1995).
10. J.P. Tower, S.P. Tobin, P.W. Norton, A.B. Bollong, A. Socha, J.H. Tegilgas, C.K. Ard, and H.F. Arlinghaus, J. Electron. Mater. 25, 1183 (1996).