Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions

Thin Solid Films

Volumn 357, Issue 2, 1999, Pages 137-143

  Pecz B ^a   Yakimova, R ^b,c   Syvajarvi M ^b   Lockowandt, C ^d   Radamson, H ^e   Radnoczi G ^a   Janzen E ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b LINKÖPING UNIVERSITY   (Sweden)

^c Outokumpu Semitronic   (Sweden)

^d SWEDISH SPACE CORPORATION   (Sweden)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; LIQUID PHASE EPITAXY; MICROGRAVITY PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NANOPIPES;

SEMICONDUCTING FILMS;

EID: 0343081525     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00657-4     Document Type: Article

References (14)

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