Silicon carbide grown by liquid phase epitaxy in microgravity

Journal of Materials Research

Volumn 13, Issue 7, 1998, Pages 1812-1815

  Yakimova, R ^a   Syvajarvi M ^a   Lockowandt, C ^b   Linnarsson, M K ^c   Radamson, H H ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH SPACE CORPORATION   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; GRAVITATIONAL EFFECTS; LIQUID PHASE EPITAXY; MICROGRAVITY PROCESSING; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

CARRIER LIFETIME;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032121923     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0256     Document Type: Article

References (10)

1. P. G. Neudeck, J. El. Mat. 24, 283 (1995).
2. E. Bauser, in Crystal Growth of Electronic Materials, edited by E. Kaldis (North-Holland, Amsterdam, 1985), p. 41.
3. C. Lockowandt, R. Yakimova, M. Syväjärvi, and E. Janzén, 47th International Astronautical Congress, 7-11 October 1996, Beijing, China, in press.
4. A. I. Mlavsky and M. Weinstein, J. Appl. Phys. 34, 2885 (1963).
5. R. Yakimova, T. Tuominen, A. S. Bakin, J-O. Fornell, A. Vehanen, and E. Janzén, Inst. Phys. Conf. Ser. 142, 101 (1996).
6. M. Syväjärvi, R. Yakimova, I. G. Ivanov, and E. Janzén, Mat. Sci. Eng. B 46, 329 (1997).
7. P. F. Fewster, Appl. Surf. Sci. 90, 381 (1991).
8. Fluid Sciences and Material Sciences in Space-A European Perspective, edited by H. U. Walter (Springer-Verlag, Berlin, 1987), p. 327.
9. T. Sikegawa, M. Kimura, and A. Tanaka, J. Cryst. Growth 108, 598 (1991).
10. Yu. M. Tairov and V. F. Tsvetkov, Tehnologuya poluprovodnikovyh i dielectrikheskih materialov, Moskva, Vysshaya Shkola (1983), p. 189 (in Russian).