Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 36-39

  Müller, Heinz Olaf ^a   Williams, David A ^a   Mizuta, Hiroshi ^a   Durrani, Zahid A K ^b  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; SEMICONDUCTING SILICON;

COULOMB BLOCKADE SILICON DEVICES; OHMIC CONDUCTANCE;

TUNNEL JUNCTIONS;

EID: 0343005953     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00530-9     Document Type: Article

References (9)

1. Nakazato K., Ahmed H. Adv. Mater. 5:1993;668.
2. Devoret M.H., Grabert H. NATO ASI Ser. B Phy. 294:1992;1-19.
3. Esteve D. NATO ASI Ser. B Phy. 294:1992;109-138.
4. Averin D.V., Likharev K.K. Altshuler B.L., Lee P.A., Webb R.A. Mesoscopic Phenomena in Solids, Modern Problems in Condensed Matter Sciences. 30:1991;173-271 Elsevier, Amsterdam.
5. Smythe W.R. Static and Dynamic Electricity. 1968;McGraw-Hill, New York.
6. Ingold G.-L., Wyrowski P., Grabert H. Z. Phys. B85:1991;443.
7. Durrani Z.A.K., Irvine A.C., Ahmed H., Nakazato K. Appl. Phys. Lett. 74:1999;1293.
8. Amakawa S. et al. IEICE Trans. Electron. 81C:1998;21.
9. Kirihara M., Nakazato K., Wagner N.I. Jpn. J. Appl. Phys. 38/1:1999;2028.