A heavy ion implanted pocket 0.10 μm n-type metal-oxide-semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 4051-4054

  Benistant, F ^a   Tedesco, S ^a   Guegan, G ^a   Martin, F ^a   Heitzmann, M ^a   Dal'zotto, B ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342989801     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588642     Document Type: Article

References (7)

1. F. Benistant et al., ESSDERC'95.
2. P. Zandbergen et al., Microelectron. Eng. 23, 299 (1994).
3. R. Jonckheere et al., Microelectron. Eng. 27, 231 (1995).
4. G. Baccarani et al., IEEE Trans. Electron Devices ED-31, 452 (1984).
5. M. G. Stinson et al., IEEE Trans. Electron Devices ED-38, 487 (1991).
6. G. Guegan, ESSDERC'90, p. 120.
7. F. Benistant et al., Microelectron. Eng. 30, 459 (1996).