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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1553-1556

Study of AlGaAs/GaAs quantum wells overgrown on in situ Cl2-etched GaAs substrates

(8) Lopez Lopez M a Luyo Alvarado, J a Melendez Lira M a Cano Aguilar, O b Megia Garcia C b Ortiz Lopez J b Contreras Puente, G b Ishikawa, T c,d

a DEPARTAMENTO DE FÍSICA (Mexico)

b INSTITUTO POLITÉCNICO NACIONAL (Mexico)

c Optoelectronics Technology Research Laboratory (Japan)

d WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; ELECTRIC FIELD EFFECTS; ETCHING; IMPURITIES; LIGHT REFLECTION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS;

ELECTRIC FIELD STRENGTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0342906679 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.591425 Document Type: Article

Times cited : (7)

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