Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials

Critical Reviews in Solid State and Materials Sciences

Volumn 17, Issue 1, 1991, Pages 47-106

  Tan, T Y ^a   GOsele U ^a   Yu, S ^a  

^a DUKE UNIVERSITY   (United States)

Author keywords

Fermi level effect; kick out mechanism; nonequilibrium; point defect; point defects; superlattice disordering

Indexed keywords

DIFFUSION;

FERMI LEVEL EFFECT; INTERDIFFUSION; POINT DEFECTS; SUPERLATTICE DISORDERING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0025786369     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408439108244631     Document Type: Article

References (94)

1. Bourgoin, J. C., von Bardeleben, H. J., and Stievenard, D., J. Appl. Phys., 64, R65, 1988.
2. Mooney, P. M., Rad. Eff., 111, 281, 1989.
3. Casey, H. C., Atomic Diffusion in Semiconductors, Shaw, D., Ed., Plenum Press, London, 1973, 351.
4. Tuck B., Atomic Diffusion in III—V Semiconductors, Adam Hilger, Bristol, 1988.
5. Vieland, L. J., J. Phys. Chem. Solids, 21, 318, 1961.
6. Antell, G. R., Solid-State Electron., 8, 943, 1965.
7. Young, A. B. Y. and Pearson, G. L., J. Phys. Chem. Solids, 31, 517, 1970.
8. Kendall, D. L. and Huggins, R. A., J. Appl. Phys., 40, 2750, 1969.
9. Winteler, H. R., Helv. Phys. Acta, 44, 451, 1970.
10. Goldstein, B., Phys. Rev., 121, 1305, 1961.
11. Palfrey, H. D., Brown, M., and Willoughby, A. F. W., J. Electrochem. Soc., 128, 2224. 1981.
12. Laldig, W. D., Holonyak, N., Jr., Camras, M. D., Hess, K., Colman, J. J., Dapkus, P. D., and Bardeen, J., Appl. Phys. Lett., 38, 776, 1981.
13. Deppe, D. G. and Holonyak, N., Jr., J. Appl. Phys., 66. R93, 1988.
14. KrÖger, F. A., The Chemistry of Imperfect Crystals North-Holland, Amsterdam, 1964, chap. 13.
15. Arthur, J. R., J. Phys. Chem. Solids, 28, 2257, 1967.
16. Wagner, C. and Grunwald, K., Z. Phys. Chem., B40, 455, 1938.
17. Reiss, H., J. Chem. Phys., 21, 1209, 1953.
18. Longini, R. L. and Greene, R. F., Phys. Rev., 102, 992, 1956.
19. Schockley, W. and Last, J. T., Phys. Rev., 107, 392, 1957.
20. Chen, S., Lee, S.-T., Braunstein, G., and Tan, T. Y., Appl. Phys. Lett., 55, 1194, 1989.
21. Luysberg, M., Jäger, W., Urban, K., Perret, M., Stolwijk, N. A., and Mehrer, H., Inst. Phys. Conf. Ser., 100, 409, 1989.
22. Pandey, K. C., Phys. Rev. Lett., 57, 2287, 1986.
23. Chang, L. L. and Koma, A., Appl. Phys. Lett., 29, 138, 1976.
24. Petroff, P. M.,J. Vac. Sci. Technol., 14, 973, 1977.
25. Fleming, R. M., McWhan, D. B., Gossard, A. C., Wiegmann, W., and Logan, R. A., J. Appl. Phys., 51, 357, 1980.
26. Cibert, J., Petroff, P. M., Werder, D. J., Pearton, S. J., Gossard, A. C., and English, J. H., Appl. Phys. Lett., 49, 223, 1986.
27. Schlesinger, T. E. and Kuech, T., Appl. Phys. Lett., 49, 518, 1986.
28. Tan, T. Y. and Gösele, U., Appl. Phys. Lett., 52, 1240, 1988.
29. Tan, T. Y. and Gösele, U., Mater. Sci. Eng., B1, 47, 1988.
30. Willoughby, A. F. W., Defects in Semiconductor II, Mahajan, S. and Corbett, J. W., Eds., Mater. Res. Soc. Proc. 14, North-Holland, Amsterdam, 1983, 237.
31. Guido, L. J., Holonyak, N., Jr., Hsieh, K. C., Kaliski, R. W., Plano, W. E., Burtham, P. D., Thornton, R. L., Epler, J. E., and Paoli, T. L., J. Appl. Phys., 61, 1372, 1987.
32. Laidig, W. D., Lee, J. W., Chiang, P. K., Simpson, L. W., and Bedir, S. M., J. Appl. Phys., 54, 6382, 1983.
33. Camras, M. D., Holonyak, N., Jr., Hess, K., Ludowise, M. J., Dietze, W. T., and Lews, C. R., Appl. Phys. Lett., 42, 185, 1983.
34. Coleman, J. J., Dapkus, P. D., Kirkpatrick, C. G., Camras, M. D., and Holonyak, N., Appl. Phys., 40, 904, 1982.
35. Kawabe, M., Matsuura, N., Shimizu, N., Hasegawa, F., and Nannichi, Y., Jpn. J. Appl. Phys., 23, L623, 1984.
36. Rao, E. V. K., Thibierge, H., Brillouet, R., Alexandre, F., and Azoulay, R., Appl. Phys. Lett., 46, 867, 1985.
37. Nakamura, T., Komiya, S., Inata, T., Muto, S., Hiyamizu, S., and Umebu, I., Proc. Mat. Res. Soc., 56, 339, 1986.
38. Kawabe, M., Shimura, N., Hasegawa, F., and Nannichi, Y., Appl. Phys. Lett., 46, 849, 1985.
39. Myers, D. R., Biefeld, R. M., Fritz, I. J., Picraux, S. T., and Zipperian, T. E., Appl. Phys. Lett., 44, 1052, 1984.
40. Van Vechten, J. A., J. Appl. Phys., 53,7082, 1982.
41. Tan, T. Y. and Gösele, U., J. Appl. Phys., 61, 1841, 1987.
42. Kobayashi, J., Nakajima, M., Fukunaga, T., Takamori, T., Ishida, K., Nakashima, H., and Ishida, K., Jpn. J. Appl. Phys., 25, L736, 1986.
43. Rao, E. V. K., Duhamel, N., Favennec, P. N., and L'Haridon, H.,J. Appl. Phys., 49, 3898, 1978.
44. Itoh, T. and Nomura, M., Jpn. J. Appl. Phys., 22, L389, 1983.
45. Holmes, D. E., Chen, R. T., Elliott, K. R., and Kirkpatrick, C. G., AppL Phys. Lett., 40, 46, 1982; 40, 898, 1982.
46. Woodhead, J., Newman, R. C., Grant, I., Rumsby, D., and Ware, R. M., J. Phys., C16, 5523, 1983.
47. Rao, E. V. K., Ossart, P., Alexandre, F., and Thibierge, H., Appl. Phys. Lett., 50, 588, 1987.
48. Mei, P., Yoon, H. W., Venkatesan, T., Schwarz, S. A., and Harbison, J. P., Appl. Phys. Lett., 50, 1823, 1987.
49. Deppe, D. G., Holonyak, N., Jr., Hsieh, K. C., Gravrilovic, P., Stutius, W., and Williams, J., Appl. Phys. Lett., 51, 581, 1987.
50. Baraff, G. A. and Schluter, M., Phys. Rev. Lett., 55, 1327, 1986.
51. Mei, P., Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., and Florez, L. A., Epitaxy of Semiconductor Layered Structures, Tong, R. T., Dawson, L. R., and Gunshar, R. L., Eds., Mater. Res. Soc. Proc. 102, Pittsburgh, PA, 1988, 61.
52. Tan, T. Y. and Gösele, U., Advances in Materials Processing and Devices in III—V Compound Semiconductors, Sadana, D. K., Eastman, L. F., and Dupuis, R., Eds., Mater. Res. Soc. Proc. 144, 1989, 221.
53. Kahen, K. B., Appl. Phys. Lett., 53, 2071, 1988.
54. Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., and Colas, E., J. Appl. Phys., 65, 2165, 1989.
55. Lee, J. W. and Laidig, W. D., J. Electron. Mater., 13, 147, 1984.
56. Hirayama, Y., Susuki, Y., and Okamoto, H., Jpn. J. Appl. Phys., 24, 1498, 1985.
57. Ralston, J., Wicks, G. W., Eastman, L. F., Decooman, B. C., and Carter, C. B., J. Appl. Phys., 59, 120, 1986.
58. Kamata, N., Kobayashi, K., Endo, K., Susuki, T., and Misu, A., Jpn. J. Appl. Phys., 26, 1092, 1987.
59. Zucker, E. P., Hashimoto, A., Fukunaga, T., and Watanabe, N., Appl. Phys. Lett., 54, 564, 1989.
60. Longini, R. L., Solid-State Electron., 5, 127, 1962.
61. Kadhim, M. A. H. and Tuck, B., J. Mater. Sci., 7, 68, 1972.
62. Gösele, U. and Morehead, F., J. Appl. Phys., 52, 4617, 1981.
63. Guido, L. J., Cunningham, B. T., Nam, D. W., Hsieh, K. C., Plano, W. E., Major, J. S., Jr., Vesely, E. J., Sugg, A. R., Holonyak, N., Jr., and Stillman, G. E., J. Appl. Phys., 67, 2179, 1990.
64. Greiner, M. E. and Gibbons, J. F., Appl. Phys. Lett., 44, 750, 1984.
65. Kavanagh, K. L., Mayer, J. W., Magee, C. W., Sheets, J., Tong, J., and Woodall, J. M., Appl. Phys. Lett., 47, 1208, 1985.
66. Kavanagh, K. L., Magee, C. W., Sheets, J., and Mayer, J. W., J. Appl. Phys., 64, 1845, 1988.
67. Deppe, D. G., Holonyak, N., Jr., Kish, F. A., and Baker, J. E., Appl. Phys. Lett., 50, 998, 1987.
68. Deppe, D. G., Holonyak, N., Jr., and Baker, J. E., Appl. Phys. Lett., 52, 129, 1988.
69. Spitzer, W. G. and Allred, W., J. Appl. Phys., 39, 4999, 1969.
70. Hwang, C. J., J. Appl. Phys., 39, 5347, 1969.
71. Kung, J. K. and Spitzer, W. G., J. Appl. Phys., 45, 4477, 1974.
72. Greiner, M. E. and Gibbons, J. F., J. Appl. Phys., 57, 5181, 1985.
73. Yu, S., Gösele, U., and Tan, T. Y.,J. Appl. Phys. 66, 2952, 1989.
74. Yu, S., Gösele, U., and Tan, T. Y., Defects and Diffusion in Semiconductors: Bulk and Layered Structures, Bemholc, J., Haller, E. E., and Wolford, D. J., Eds., Mater. Res. Soc. Proc., Pittsburgh, PA, 1990,671.
75. Murray, J., Deal, M. D., and Stevenson, D. A., Defects and Diffusion in Semiconductors: Bulk and Layered Structures, Bemholc, J., Haller, E. E., and Wolford, D. J., Eds., Mater. Res. Soc. Proc., Pitts-burgh, Pa, 1990, 691.
76. Yu, S., Gösele, U., and Tan, T. Y., J. Appl. Phys., 3, 1991.
77. Ting, C. H. and Pearson, G. L., J. Electrochem. Soc., 118, 454, 1971.
78. Ball, R. K., Hutchinson, P. W., and Dobson, P. S., Philos. Mag., A43, 1299, 1981.
79. Stolwijk, N. A., Perret, M., and Mehrer, H., Diffusion Defect Data, A59, 78, 1988.
80. Kendall, D. L., Semiconductors and Semimetals, Vol. 4, Willardson, R. K. and Beer, A. C., Eds., Academic Press, Orlando, FL, 1968, 163.
81. Tuck, B. and Houghton, A. J. N., J. Phys., D14, 2147, 1981.
82. Enquist, P., Hutchby, J. A., and de Lyon, T. J., J. Appl. Phys., 63,4485, 1988.
83. Masu, K., Konagai, M., and Takahoshi, V., Appl. Phys. Lett., 37, 182, 1980.
84. Enquist, P., Wicks, G. W., Eastman, L. F., and Hitzman, C., J. Appl. Phys., 58, 4130, 1985.
85. Enquist, P., Lunardi, L. M., Welch, D. F., Wicks, G. W., Shealy, J. R., Eastman, L. F., and Calawa, A. R., Inst. Phys. Conf. Ser., 74, 599, 1985.
86. Enquist, P. M., J. Cryst. Growth, 93, 637, 1988.
87. Low, T. S., Mars, D. E., Tunner, J. E., and Fischer-Colbrie, A. M., 31st Elect. Mater. Conf., Cambridge, MA, June 21 to 23, 1989.
88. Hobson, W. S., Pearton, S. J., and Jordan, A. S., Appl. Phys. Lett., 56, 1251, 1990.
89. Houston, P. A., Shephard, F. R., SpringThorpe, A. J., Mandevilla, P., and Margittai, A., Appl. Phys. Lett., 52, 1219, 1988.
90. Deppe, D. G., Appl. Phys. Lett., 56, 370, 1990.
91. Petroff, P. M. and Kimerling, L. C., Appl. Phys. Lett., 29, 461, 1976.
92. Marioton, B. P. R., Tan, T. Y., and Gösele, U., Appl. Phys. Lett., 54, 840, 1989.
93. Hutchinson, P. W. and Dobson, P. S., J. Mater., Sci., 10, 1636, 1975.
94. Ogawa, K. and Kawabe, M., Jpn. J. Appl. Phys., 29, 1240, 1990.