Small angle neutron scattering in P+-doped porous silicon

Journal of Porous Materials

Volumn 7, Issue 1, 2000, Pages 331-334

  Kadar G ^a,b   Vazsonyi E ^a   Borbely S ^a   Kali G ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ETCHING; NANOSTRUCTURED MATERIALS; NEUTRON SCATTERING; PORE SIZE; SEMICONDUCTOR DOPING; SILICON WAFERS; SINGLE CRYSTALS;

ELECTROCHEMICAL ETCHING;

POROUS SILICON;

EID: 0342733428     PISSN: 13802224     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009666416744     Document Type: Article

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