Nanoscale selective adsorption of disilane on the Si(111) surface partially terminated by Ga atoms

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 1, 1997, Pages 40-44

  Fujita, Ken ^a   Kusumi, Yukihiro ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342732146     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589252     Document Type: Article

References (29)

1. A. Kawazu and H. Sakama, Phys. Rev. B 37, 2704 (1988).
2. K. Fujita, Y. Kusumi, and M. Ichikawa, Appl. Surf. Sci. (in press).
3. H. Nakahara and M. Ichikawa, Appl. Phys. Lett. 61, 1531 (1992).
4. K. Fujita, Y. Kusumi, and M. Ichikawa, Appl. Phys. Lett. 68, 770 (1996); K. Fujita, Y. Kusumi, and M. Ichikawa, Surf. Sci. 357/358, 490 (1996).
5. K. Fujita, Y. Kusumi, and M. Ichikawa, Appl. Phys. Lett. 68, 770 (1996); K. Fujita, Y. Kusumi, and M. Ichikawa, Surf. Sci. 357/358, 490 (1996).
6. D. M. Eigler and E. K. Schweizer, Nature 344, 524 (1990).
7. I.-W. Lyo and P. Avouris, Science 253, 173 (1991).
8. S. Hosoki, S. Hosaka, and T. Hasegawa, Appl. Surf. Sci. 60/61, 643 (1992).
9. J. W. Lyding, T.-C. Shen, J. S. Hubacek, J. R. Tucker, and G. C. Abeln, Appl. Phys. Lett. 64, 2010 (1994).
10. J. A. Dagata, J. Schneir, H. H. Harary, C. J. Evans, M. T. Postek, and J. Bennett, Appl. Phys. Lett. 56, 2001 (1990).
11. H. Hirayama, T. Tatsumi, and N. Aizaki, Appl. Phys. Lett. 52, 1484 (1988).
12. S. M. Gates, Surf. Sci. 195, 307 (1988).
13. R. Imbihl, J. E. Demuth, S. M. Gates, and B. A. Scott, Phys. Rev. B 39, 5222 (1989).
14. Ph. Avouris and F. Bozso, J. Phys. Chem. 94, 2243 (1990).
15. K. D. Brommer, M. Galvan, A. Dal Pino, Jr., and J. D. Joannopoulos, Surf. Sci. 314, 57 (1994).
16. K. Takayanagi, Y. Tanishiro, M. Takahashi, and S. Takahashi, J. Vac. Sci. Technol. A 3, 1502 (1985); Surf. Sci. 164, 367 (1985).
17. K. Takayanagi, Y. Tanishiro, M. Takahashi, and S. Takahashi, J. Vac. Sci. Technol. A 3, 1502 (1985); Surf. Sci. 164, 367 (1985).
18. J. M. Nicholls, B. Reihl, and J. E. Northrup, Phys. Rev. B 35, 4137 (1987).
19. K. Fujita, Y. Kusumi, and M. Ichikawa, Surf. Sci. (to be published).
20. -2 by using the sticking coefficient 0.085 which was reported in Ref. 19.
21. B. Joyce, S. Mokler, J. Zhang, N. Ohtani, M.-H. Xie, and J. Hartung, Proceedings of International Conference on Advanced Microelectronic Devices and Processing 1994, Sendai, Tohoku University, 1994, pp. 173-178.
22. -2 on the Si(111) surface.
23. K. Takaoka, M. Yoshimura, and T. Yao, Phys. Rev. B 48, 5657 (1993).
24. T.-C. Shen, C. Wang, J. W. Lyding, and J. R. Tucker, Phys. Rev. B 50, 7453 (1994).
25. S. K. Kulkarni, S. M. Gates, C. M. Greenlief, and H. H. Sawin, Surf. Sci. 239, 26 (1990).
26. K. M. Ho, M. L. Cohen, and M. Schlüter, Phys. Rev. B 15, 3888 (1977).
27. G. Schulze and M. Henzler, Surf. Sci. 124, 336 (1983).
28. C. M. Greenlief and M. Armstrong, J. Vac. Sci. Technol. B 13, 1810 (1995).
29. Y. Morita, K. Miki, and H. Tokumoto, Surf. Sci. 325, 21 (1995).