Improved TEM samples of semiconductors prepared by a smallangle cleavage technique

Microscopy Research and Technique

Volumn 24, Issue 2, 1993, Pages 180-184

  McCaffrey, John P ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Cleaving; Crystal structure; Specimen preparation

Indexed keywords

SILICON;

ARTICLE; ARTIFACT; CRYSTAL STRUCTURE; PRIORITY JOURNAL; SAMPLE; SEMICONDUCTOR; STRUCTURE ANALYSIS; TECHNIQUE; TRANSMISSION ELECTRON MICROSCOPY;

MICROSCOPY, ELECTRON; SEMICONDUCTORS;

EID: 0027530653     PISSN: 1059910X     EISSN: 10970029     Source Type: Journal    
DOI: 10.1002/jemt.1070240210     Document Type: Article

References (7)

1. Fracture surface energy determination in {110} planes in silicon by the double torsion method
2. Energy relations of the surface of solids
3. Surface energy of germanium and silicon
4. Smallangle cleavage of semiconductors for transmission electron microscopy
5. Fundamentals of silicon fracture
6. Multilayer mirrors for XUV Gelaser wavelength, Conf
7. The measurement of the roughness of W/Si multilayers using the Fresnesl method