Electronic structure of wurtzite- and zinc blende-GaN studied by angle-resolved photoemission

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 200-205

  Maruyama, Takahiro ^a   Miyajima, Yutaka ^a   Hata, Kazutaka ^a   Cho, Sung Hwan ^a   Akimoto, Katsuhiro ^a   Okumura, Hajime ^b   Yoshida, Sadafumi ^b   Kato, Hiroo ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

Band structure; GaN; Lattice mismatch; Molecular beam epitaxy (MBE); Photoemission

Indexed keywords

EID: 0342725751     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0387-6     Document Type: Article

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