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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5012-5017

Comprehensive Analysis of an Isolation Area Obtained by Local Oxidation of Silicon Without Field Implant

(7) Fay, Jean Luc a Beluch, Jean b Allirand, Laurence c Brosset, Dominique a Despax, Bernard b Bafleur, Marise b Sarrabayrouse, Gerard c

a MOTOROLA INC (United States)

b Laboratoire Plasma et Conversion d'Energie (France)

c LAAS CNRS (France)

Author keywords

Fixed positive charges; Lpcvd silicon nitride; Parasitic mos; Plasma deposited oxides; Surface states

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; LEAKAGE CURRENTS; OXIDATION; OXIDES; PLASMA APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE;

PARASITIC TRANSISTORS;

MOSFET DEVICES;

EID: 0342587999 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.5012 Document Type: Article

Times cited : (3)

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