{110} and {111} ordering in MOVPE-grown (Ga, In)P on (100) GaAs substrates at low temperature

Crystal Research and Technology

Volumn 35, Issue 6, 2000, Pages 831-837

  Hahnert I ^a   Knauer, A ^b   Schneider, R ^a   Rechenberg, I ^b   Klein, A ^b   Neumann, W ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; ENERGY GAP; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CATHODOLUMINESCENCE SPECTROSCOPY; EPITAXIAL LAYERS; ORDERING;

CRYSTAL MICROSTRUCTURE;

EID: 0342572546     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200007)35:6/7<831::AID-CRAT831>3.0.CO;2-V     Document Type: Article

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