Structural and optical properties of GaxIn1-xP layers grown by chemical beam epitaxy

Journal of Electronic Materials

Volumn 27, Issue 5, 1998, Pages 409-413

  Seong, Tae Yeon ^a   Yang, Jung Ja ^a   Ryu, Mee Yi ^a   Song, Jong In ^a   Wu, Phil W ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Chemical beam epitaxy (CBE); GaInP; Ordering; Photoluminescence (PL) transmission electron microscopy (TEM)

Indexed keywords

EID: 0001336353     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0169-1     Document Type: Article

References (32)

1. F.A. Kish, F.M. Steranka, D.C. DeFevere, D.A. Vandenwater, K.G. Park, C.P. Kuo, T.D. Ostenowshi, M.J. Peanasky, J.G. Yu, R.M. Fletcher, D.A. Steigerwald and M.G. Craford, Appl. Phys. Lett. 64, 2839 (1994).
2. T. Katsuyama, I. Yoshida, J. Shinkai, J. Hashimoto and H. Hayashi, Appl. Phys. Lett. 59, 3351 (1991).
3. R.M. Kapre, W.T. Tsang, N.T. Ha, M.C. Wu and Y.K. Chen, Appl. Phys. Lett. 62, 2212 (1993).
4. M. Ikeda and K. Kaneko, J. Appl. Phys. 66, 5285 (1989).
5. G.B. Stringfellow and G.S. Chen, J. Vac. Sci. Technol. B 9, 2182 (1991) and references therein.
6. S.R. Kurtz, J.M. Olson and A. Kibbler, Appl. Phys. Lett. 57, 1922 (1990).
7. B.T. McDermott, N.A. El-Masry, B.L. Jiang, F. Hyuga, S.M. Bedair and W.M. Duncan, J. Cryst. Growth 107, 96 (1991).
8. P. Bellon, J.P. Chevalier, E. Augarde, J.P. André and G.P. Martin, J. Appl. Phys. 66, 2388 (1989).
9. T-Y. Seong, D.Phil. Thesis, University of Oxford, 1991.
10. S. Yasuami, C. Nozaki and Y. Ohba, Appl. Phys. Lett. 52, 2031 (1988).
11. T-Y. Seong, G.R. Booker, A.G. Norman and I.T. Ferguson, Appl. Phys. Lett. 64, 3593 (1994).
12. A. Gomyo, T. Suzuki and S. Iijima, Phys. Rev. Lett. 60, 2645 (1988).
13. T-Y. Seong, A.G. Norman, G.R. Booker and A.G. Cullis, J. Appl. Phys. 75, 7852 (1994).
14. M. Kondow, H. Kakibayashi, S. Minagawa, Y. Inoue, T. Nishino and Y. Hamakawa, Appl. Phys. Lett. 53, 2053 (1988).
15. L.C. Su, I.H. Ho and G.B. Stringfellow, J. Cryst. Growth 146, 558 (1995).
16. H. Murata, I.H. Ho and G.B. Stringfellow, Appl. Phys. Lett. 68, 2237 (1996).
17. S-H. Wei and A. Zunger, Appl. Phys. Lett. 56, 662 (1990).
18. D.J. Arent, M. Bode, K.A. Bertness, S.R. Kurtz and M. Olson, Appl. Phys. Lett. 62, 1806 (1993).
19. J. Wang, J.W. Steeds and M. Hopkinson, Semicond. Sci. Technol. 8, 502 (1993).
20. K. Chen, R. Kapre, W.T. Tsang, A. Tate, D.A. Humphrey and L. Fan, J. Cryst. Growth 136, 221 (1994).
21. J. Taft, and J.H.L Spence, J. Appl. Cryst. 15, 60 (1982).
22. K. Ohshima, J. Harada, M. Morinaga, P. Georgopoulos and J.B. Cohen, Acta Crystallogr. A 44, 167 (1988).
23. C.S. Baxter, W.M. Stobbs and J.H. Wilkie, J. Cryst. Growth 112, 373 (1991).
24. C. Meenakarn, A.E. Staton-Bevan, M.D. Dawson, G. Duggan and A.H. Kean, presented at Tenth Intl. Conf. on Microscopy of Semiconducting Materials, April, 1997, Oxford, UK.
25. J-J. Yang, R. Spirydon, T-Y. Seong, S. Lee and G.B. Stringfellow, to be published.
26. M.C. Belong, D.J. Mowbray, R.A. Hogg, M.S. Skdnick, J.E. Williams, K. Meehan, S.R. Kurtz, J.M. Olson, R.P. Schnerdes, M.C. Wu and H. Hopkinson, Appl. Phys.Lett. 66, 3185 (1995).
27. P.W. Yu, J. Appl. Phys. 48, 2434 (1977).
28. M.C. Belong, W.D. Ohlsen, I. Voihl, P.C. Taylor and J.M. Olson, J. Appl. Phys. 70, 2780 (1991).
29. C.T.H.F. Liedenbaum, A. Valater, A.L.G.J. Severans and G.W. 'tHooft, Appl. Phys. Lett. 57, 3698 (1990).
30. P.J. Dean, J. Appl. Phys. 38, 3551 (1967).
31. A.M. White, J. Phys. C. 5, 1727 (1972).
32. P. Ernst, C. Geng, F. Scholz, H. Schweizer, Y. Zhang and A. Mascarenhas, Mater. Res. Soc Symp. Proc. 417, (Pittsburgh, PA: Mater. Res. Soc., 1996), p. 19.