Low frequency noise and DLTS as semiconductor device characterization tools

Solid State Electronics

Volumn 31, Issue 2, 1988, Pages 205-217

  Scholz, F ^a   Hwang, J M ^b   Schroder, D K ^b  

^a North County Inc   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SPECTROSCOPY - APPLICATIONS;

CURVE FITTING; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); GENERATION RECOMBINATION (GR) TRAPPING PARAMETERS; LOW FREQUENCY NOISE; SEMICONDUCTOR DEVICE CHARACTERIZATION; TRAP ENERGIES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023963960     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(88)90129-3     Document Type: Article

References (7)

1. The Use of Charge Pumping in the Correlation of Surface State Density and Noise