Uniaxial-stress symmetry studies on the E1, E2 and E3 irradiation-induced defects in gallium arsenide

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 1027-1032

  Hartnett, S J ^a   Palmer, D W ^a  

^a UNIVERSITY OF SUSSEX   (United Kingdom)

Author keywords

Defect symmetries; DLTS; E1; E2; E3; GaAs; Irradiation; Uniaxial stress

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL SYMMETRY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; IONIZATION OF SOLIDS; POINT DEFECTS; STRESS ANALYSIS;

IONIZATION ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0342407481     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1027     Document Type: Article

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