Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 260, Issue 1-2, 2004, Pages 125-129

  Misaki, Takao ^a   Wakahara, Akihiro ^a   Okada, Hiroshi ^a   Yoshida, Akira ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Remote plasma enhanced process; B1. ZnGeN2; B2. Nitride semiconductor

Indexed keywords

LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS;

REMOTE-PLASMA ENHANCED PROCESS;

EPITAXIAL GROWTH;

EID: 0242691932     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.011     Document Type: Article

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