Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 2003, Pages 1000-1005

  Frey, D ^a   Schanen, J L ^a   Auge J L ^b   Lesaint, O ^b  

^a LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE   (France)

^b CNRS   (France)

Author keywords

Electric field; Finite element simulations; Partial discharge; Power modules

Indexed keywords

DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; INSULATED GATE BIPOLAR TRANSISTORS; PARTIAL DISCHARGES;

POWER MODULES;

ELECTRIC FIELD EFFECTS;

EID: 0242676812     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. F.J. Auerbach et al., "6.5-kV IGBT-Modules", Proc. PCIM 1999
2. J. Göttert et al., "Insulation voltage test and partial discharge test of 3.3-kV IGBT Modules" Proc. PCIM 1997
3. F. Breit et al., "Partial Discharge Detection in Power Modules" Proc. PESC 2002
4. Magsoft Corporation 1223 People Ave., Troy NY12180 www.magsoft-flux.com
5. Ansoft Corporation Four Station Square Suite 200, Pittsburgh PA15219-1119 USA, http://www.ansoft.com
6. http://www.gesilicones.com
7. G. Mitic, G. Lefranc., "Localisation of electricalinsulation- and partial discharge failures of IGBT modules" Proc. IAS 1999
8. Silvaco International 4701 Patrick Henry Drive, Bldg#2 Santa Clara CA 95054, http://www.silvaco.com
9. M. Vellvehi et al, "Edge Terminations for 6,5 kV IGBTs" Proc. EPE 2001
10. E. Dutarde, F. Breit, J. Saiz, S. Dinculescu, T. Lebey, French Patent FR 2 828 288
11. G. Mitic, T. Licht, G. Lefranc., "IGBT Module Technology with Partial Discharge Resistance" Proc. IAS 2001