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Volumn 2, Issue , 1999, Pages 1453-1458
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Localisation of electrical-insulation- and partial-discharge failures of IGBT modules
a
a
SIEMENS AG
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
BIPOLAR TRANSISTORS;
COMPUTER SIMULATION;
ELECTRIC CURRENTS;
ELECTRIC FIELD EFFECTS;
ELECTRIC INSULATION;
ELECTRIC POTENTIAL;
INTERFACES (MATERIALS);
METALLIZING;
PARTIAL DISCHARGES;
SILICONES;
SPECTROSCOPY;
ALUMINUM NITRIDE;
INSULATED GATE BIPOLAR TRANSISTORS;
PARTIAL DISCHARGE FAILURE;
SILICONE GEL;
POWER ELECTRONICS;
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EID: 0033326881
PISSN: 01972618
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (24)
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References (15)
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