Application of femtosecond laser ablation time-of-flight mass spectrometry to in-depth multilayer analysis

Analytical Chemistry

Volumn 75, Issue 14, 2003, Pages 3435-3439

  Margetic, Vanja ^a   Niemax, Kay ^a   Hergenröder, Roland ^a  

^a LEIBNIZ INSTITUT FÜR ANALYTISCHE WISSENSCHAFTEN ISAS E V   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FEMTOSECOND LASER SYSTEM;

MASS SPECTROMETRY; MULTILAYERS; SEMICONDUCTOR MATERIALS; SENSITIVITY ANALYSIS; SILICON WAFERS; THIN FILMS;

LASER ABLATION;

CHROMIUM; METAL; NICKEL; SILICON;

ACCURACY; ARTICLE; CALCULATION; CONTROLLED STUDY; FILM; IMPLANTATION; MATRIX ASSISTED LASER DESORPTION IONIZATION TIME OF FLIGHT MASS SPECTROMETRY; SAMPLING; SEMICONDUCTOR;

EID: 0242586129     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac020791i     Document Type: Article

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