1.55 μm AlGaInAs/InP polarization-insensitive optical amplifier with tensile strained wells grown by MOCVD

Optical and Quantum Electronics

Volumn 35, Issue 12, 2003, Pages 1107-1112

  Ma, Hong ^a   Yi, Xinjian ^a   Chen, Sihai ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

AlGaInAs InP; MOCVD; Optical amplifier; Polarization insensitive

Indexed keywords

LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN; SUBSTRATES;

ALUMINUM GALLIUM INDIUM ARSENIDE; RIDGE WAVEGUIDE STRUCTURE; SEMICONDUCTOR OPTICAL AMPLIFIER; TENSILE STRAIN;

QUANTUM WELL LASERS;

EID: 0242489518     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026268124272     Document Type: Article

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