180nm Sn-doped Ge2Sb2Te5 chalcogenide phase-change memory device for low power, high speed embedded memory for SoC applications

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2003, Pages 395-398

  Chen, Y C ^a   Chen, C T ^a   Yu, J Y ^a   Lee, C Y ^a   Chen, C F ^a   Lung, S L ^a   Liu, Rich ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC PROPERTIES; FLASH MEMORY; GERMANIUM COMPOUNDS; TIN; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY DIFFRACTION ANALYSIS;

CHALCOGENIDE MEMORY DEVICE; EMBEDDED MEMORY; PHASE CHANGE DEVICE; SYSTEM-ON-CHIP;

RANDOM ACCESS STORAGE;

EID: 0242443705     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Lai, T. Lowrey "OUM - a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," IEDM Technical Digest 2001, 2001, pp. 806-806.
2. A. Pirovano, A. L. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, and R. Bez, "Electronic switching effect in phase change memory cells," IEDM Technical Digest 2002, 2002, pp. 923-226.
3. 3 pseudo-binary amorphous thin films for an optical disk memory," J. Appl. Phys. Vol. 69, no. 5, 1991, pp. 2849-2857.
4. R. Kojima and N. Yamada, "Ge-Sn-Sb-Te phase-change recording material having high crystallization speed," Proc. of PCOS2000, 2000, pp. 36-41.
5. 5 chalcogenide," Proc. of 2003 VLSI-TSA, T16, 2003, in press.