Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide

Philosophical Magazine Letters

Volumn 83, Issue 8, 2003, Pages 473-476

  Vetter, W M ^a   Dudley, M ^a  

^a Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION REACTIONS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; STACKING FAULTS; STRAIN; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

CUBIC SILICON CARBIDE; GROWTH DEFECT; MISFIT STRAIN; STAIR ROD DISLOCATIONS;

SILICON CARBIDE;

EID: 0242365758     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/0950083031000151202     Document Type: Article

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