Evaluation of carbonized layers for 3C-SiC/Si epitaxial growth by ellipsometry

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 335-338

  Shimizu, H ^a   Ohba, T ^a   Hisada, K ^a  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

Author keywords

Carbonization; Ellipsometry; Heteroepitaxial growth; Interface layer; Optical constant; Plasma assisted CVD; SC SiC Si; Silicon surface

Indexed keywords

CARBONIZATION; EPITAXIAL GROWTH; OPTICAL CONSTANTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SINGLE CRYSTALS; AMORPHOUS CARBON; AMORPHOUS SILICON; ELLIPSOMETRY; PLASMA CVD; SILICON WAFERS; SUBSTRATES;

INTERFACE LAYERS; SILICON SURFACES; 3C-SIC/SI; AMORPHOUS CARBON THIN FILMS; CARBONIZED LAYERS; INTERFACE LAYER; PLASMA-ASSISTED CVD; SIC SINGLE CRYSTALS; SINGLE-CRYSTALLINE;

ELLIPSOMETRY; SILICON CARBIDE;

EID: 25344460011     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.335     Document Type: Article

References (2)

1. H. Shimizu and T. Ohba, Material Science Forum, Vols. 338-342 (2000) pp. 261-264
2. M. Erman, J. B. Teeten, P. Chambon, S. M. Kelso and D. E. Aspnes, J. Appl. Phys., Vol. 56, (1984) p. 2664