Effects of O2 on the {113} defect formation in Si observed by in situ ultrahigh vacuum transmission electron microscopy

Applied Physics Letters

Volumn 71, Issue 12, 1997, Pages 1661-1663

  Koto, K ^a   Takeda, S ^a   Ichihashi, T ^b   Iijima, S ^b  

^a OSAKA UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242389117     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119787     Document Type: Article

References (14)

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