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Volumn 423, Issue , 1996, Pages 545-550
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Characterization of defect structures in 3C-SiC single crystals using synchrotron white beam X-ray topography
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL MICROSTRUCTURE;
DISLOCATIONS (CRYSTALS);
INCLUSIONS;
SCANNING ELECTRON MICROSCOPY;
SINGLE CRYSTALS;
STACKING FAULTS;
SYNCHROTRON RADIATION;
BAIKOV METHOD;
NOMARSKI INTERFERENCE MICROSCOPY;
SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY (SWBXT);
SILICON CARBIDE;
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EID: 0030398936
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-423-545 Document Type: Conference Paper |
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Times cited : (1)
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References (17)
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