Effects of annealing atmosphere and substrate on the photoluminescence and Raman scattering from Si nanocrystals in a SiO2 matrix

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 10-12, 2003, Pages 799-800

  Bineva, I ^a   Nesheva, D ^a   Aneva, Z ^a   Levi, Z ^a   Raptis, C ^b   Hofmeister, H ^c   Stavrev, S ^d  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^d BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICA; SILICON; VACUUM APPLICATIONS;

THERMAL EVAPORATION;

NANOSTRUCTURED MATERIALS;

EID: 0242304419     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026113506580     Document Type: Conference Paper

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