Depth distribution of silicon-ion induced defects in crystalline silicon

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4805-4809

  Chavan, S T ^a   Dhole, S D ^a   Bhoraskar, V N ^a   Kanjilal, D ^b   Mehta, G K ^b  

^a UNIVERSITY OF PUNE   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; DEPTH DISTRIBUTION; HIGH DEFECT DENSITIES; ION RANGES; ION-INDUCED DEFECTS; IRRADIATED SAMPLES; MEV ENERGY; MINORITY CARRIER; NUCLEAR COLLISIONS; SILICON ION;

CRYSTALLINE MATERIALS; DEFECT DENSITY; DEFECTS; ETCHING;

IONS;

EID: 0242295291     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366339     Document Type: Article

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