Dependence of charge-carrier ranges in stabilized a-Se on preparation conditions and alloying

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 10-12, 2003, Pages 841-842

  Belev, G S ^a   Fogal, Bud ^a   Koughia, K V ^a   Johanson, R E ^a   Kasap, S O ^a  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; CHARGE CARRIERS; CHLORINE; PHOTOCONDUCTING MATERIALS; RAPID THERMAL ANNEALING; THICK FILMS; X RAY ANALYSIS;

PREPARATION CONDITIONS;

SELENIUM;

EID: 0242272613     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026150514758     Document Type: Conference Paper

References (5)

1. S. O. KASAP and J. A. ROWLANDS, J. Mater. Sci.: Mater. Electron. 11 (2000) 179 and the reference therein.
2. S. O. KASAP and J. A. ROWLANDS, IEE Proc. Circuits Devices Systems 149 (2002) 85 and the reference therein.
3. Z. SHUKRI, B. POLISCHUK, C. COIA and H. ROUGEOT in Proceedings of the Sixth International Symposium on the Uses of Se and Te, Scottsdale, AZ (STDA Inc. Grimbergen, Belgium, 1998) p. 25.
4. J. M. MARSHALL, F. D. FISHER and A. E. OWEN, Phys. Status Solidi 25 (1974) 419.
5. S. O. KASAP, K. V. KOUGHIA, B. FOGAL, G. BELEV and R. E. JOHANSON, Semicond. 37 (2003) 789.