Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels

IEEE International SOI Conference

Volumn , Issue , 2003, Pages 166-167

  Luyken, R J ^a   Hartwich, J ^a   Specht, M ^a   Dreeskornfeld, L ^a   Stadele M ^a   Rosner W ^a   Hofmann, F ^a   Landgraf, E ^a   Schulz, T ^a   Kretz, J ^a   Risch, L ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; IMPACT IONIZATION; MOSFET DEVICES; SEMICONDUCTOR DOPING;

ULTRATHIN BODY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0142217024     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2003.1242938     Document Type: Conference Paper

References (7)

1. C. Hu, Jpn. J. Appl. Phys. 33, 365 (1994).
2. J. P. Colinge, "SOI Technology: Materials to VLSI" (Kluwer, Academic Publishers, 1997).
3. P. Wong et al., IEDM Tech Dig., 98 (1998).
4. G. K. Keller and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003).
5. th Intern. Symposium. on SOI, ECS Proceedings (2003).
6. A. O. Adan and K. Higashi, IEEE Trans. Electron Dev. 48, 2050 (2001); R. J. Luyken et al., submitted to ESSDERC 2003.
7. A. O. Adan and K. Higashi, IEEE Trans. Electron Dev. 48, 2050 (2001); R. J. Luyken et al., submitted to ESSDERC 2003.