Luminescence properties of RP1-xVxO4: A (R = Y, Gd, La; A = Sm3+, Er3+ x = 0, 0.5, 1) thin films prepared by Pechini sol-gel process

Thin Solid Films

Volumn 444, Issue 1-2, 2003, Pages 245-253

  Yu, M ^a   Lin, J ^a   Zhou, Y H ^a   Pang, M L ^a   Han, X M ^a   Wang, S B ^a  

^a CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY   (China)

Author keywords

Lanthanides; Luminescence; Sol gel process; Thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; EMISSION SPECTROSCOPY; LUMINESCENCE; PHOSPHORS; PHOTOLUMINESCENCE; SOL-GELS; X RAY DIFFRACTION ANALYSIS; YTTRIUM COMPOUNDS;

HOMOGENEOUS PARTICLES;

THIN FILMS;

EID: 0142086864     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01130-1     Document Type: Article

References (36)

1. Choe J.Y., Ravichandran D., Biomquist S.M., Morton D.C., Kirchner K.W., Ervin M.H., Lee U. Appl. Phys. Lett. 78:2001;3800.
2. Rabinovich E.M., Shmulovich J., Fratello V.J., Kopyov N.J. Am. Ceram. Soc. Bull. 6:1987;1505.
3. Bai G.R., Zhang H., Foster C.M. Thin Solid Films. 321:1998;115.
4. Hao J., Studenikin S.A., Cocivera M. J. Lumin. 93:2001;313.
5. Korzenski M.B., Lecoeur Ph., Mercey B., Raveau B. Chem. Mater. 13:2001;545.
6. Sakka S. Struct. Bonding. 85:1996;1.
7. Ravichandran D., Roy R., Chakhovskoi A.G., Hunt C.E., White W.B., Erdei S. J. Lumin. 71:1997;291.
8. Rao R.P. Solid State Commun. 99:1996;439.
9. Lin J., Saenger D.U., Mennig M., Baerner K. Thin Solid Films. 360:2000;39.
10. M.P. Pechini, US Patent 3330697, July 11, 1967.
11. Minami T., Miyata T., Shirai T., Nakatani T. Mater. Res. Soc. Symp. Proc. 621:2000;431.
12. Fidancev E.A., Hölsä J., Blaise M.L., Porchert P. J. Phys.: Cond. Mater. 3:1991;6829.
13. Newport A., Silver J., Vecht A. J. Electrochem. Soc. 147:2000;3944.
14. Rao R.P., Devine D.J. J. Lumin. 87-89:2000;1260.
15. Sohn K.S., Zeon I.W., Chang H., Lee S.K., Park H.D. Chem. Mater. 14:2002;2140.
16. Nedelec J.M., Avignant D., Mahiou R. Chem. Mater. 14:2002;651.
17. Dexpert-Ghys J., Mauricot R., Faucher M.D. J. Lumin. 69:1996;203.
18. Aia M.A. J. Electrochem. Soc. 114:1967;367.
19. Sommerdijk J.L., Bril A., Hoex-Strik F.M.J.H. Philips Res. Rep. 32:1977;149.
20. Ropp R.C. J. Electrochem. Soc. 115:1968;940.
21. Blasse G., Bril A. J. Chem. Phys. 50:1969;2974.
22. Capobianco J.A., Kabro P., Ermeneux F.S., Moncorge R., Betinelli M., Cavalli E. Chem. Phys. 214:1997;329.
23. Hsu C., Powell R.C. J. Lumin. 10:1975;273.
24. Meyssamy H., Riwotzki K., Kornowski A., Naused S., Haase M. Adv. Mater. 11:1999;840.
25. Riwotzki K., Meyssamy H., Schnablegger H., Kornowski A., Haase M. Angew. Chem. Int. Ed. 40:2001;573.
26. Riwotzki K., Haase M. J. Phys. Chem. B. 105:2001;12 709.
27. Huigard A., Gacoin T., Boilot J.P. Chem. Mater. 12:2000;1090.
28. Korzenski M.B., Lecoeur Ph., Mercey B., Raveau B. Chem. Mater. 13:2001;1545.
29. Hirano S., Yogo T., Kikuta K., Sakamoto W., Koganei H. J. Am. Ceram. Soc. 79:1996;3041.
30. Hess N.J., Exarhos G.J. J. Non-Cryst. Solids. 178:1994;91.
31. Polman A. J. Appl. Phys. 82:1997;1.
32. Lu C.H., Jagannathan R. Appl. Phys. Lett. 80:2002;3608.
33. Nakazawa E. J. Lumin. 100:2002;89.
34. Wegh R.T., Donker H., Oskam K.D., Meijierink A. Science. 283:1999;663.
35. Blasse G., Bril A. J. Chem. Phys. 47:1967;5139.
36. Lin J., Su Q., Zhang H., Wang S. Mater. Res. Bull. 31:1996;189.