Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba2Cu3O 7-δ superconducting devices on silicon

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 246-250

  Huot, G ^a   Mechin L ^a   Bloyet, D ^a  

^a UNIVERSITÉ DE CAEN   (France)

Author keywords

Metallization; Mo; Monolithic integration; Pt; Superconducting sensors

Indexed keywords

ANNEALING; METALLIZING; PLATINUM; SUPERCONDUCTING DEVICES; THIN FILMS;

SUPERCONDUCTING SENSORS;

MOS DEVICES;

EID: 0142075279     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00379-4     Document Type: Conference Paper

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