Comparison of bulk and interface generation in silicon PIN detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 21-29

  Ruzin, A ^a   Marunko, S ^a   Tilchyn, T ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

Activation energy; Gated diodes; Interface generation; Si SiO2 interface

Indexed keywords

ACTIVATION ENERGY; DIODES; INTERFACES (MATERIALS); SILICON;

INTERFACE GENERATION;

RADIATION DETECTORS;

EID: 0142063493     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01873-4     Document Type: Conference Paper

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