Structural Study of Si(111)(2√3 × 2√3)R30°-Sn Surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 5239-5245

  Ichikawa, Toshihiro ^a   Cho, Kohei ^a  

^a MEIJI UNIVERSITY   (Japan)

Author keywords

Ab initio structure relaxation; High temperature STM; Sn induced surface structure; STM image simulation; Structural model; Surface phase transition

Indexed keywords

SCANNING TUNNELING MICROSCOPY; SILICON ALLOYS; THERMAL EFFECTS;

ROOM TEMPERATURE;

SURFACES;

EID: 0142055896     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5239     Document Type: Article

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