320×240 GaAs pixel detectors with improved X-ray imaging quality

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 460, Issue 1, 2001, Pages 67-71

  Irsigler, R ^a   Andersson, J ^a   Alverbro, J ^a   Fakoor Biniaz, Z ^a   Frojdh C ^b   Helander, P ^a   Martijn, H ^a   Meikle, D ^c   Ostlund M ^a   O'Shea, V ^c   Smith, K ^c  

^a ACREO AB   (Sweden)

^b REGAM Medical Systems International AB   (Sweden)

^c G12 8QQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; IMAGING SYSTEMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SILICON SENSORS; VAPOR PHASE EPITAXY; X RAYS;

PIXEL DETECTORS; X RAY IMAGING;

RADIATION DETECTORS;

EID: 0035278004     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)01097-4     Document Type: Article

References (3)

1. Irsigler R., Andersson J., Alverbro J., Borglind J., Fröjdh C., Helander P., Manolopoulos S., O'Shea V., Smith K. Nucl. Instr. and Meth. A. 434:1999;24.
2. Howes M.J., Morgan D.V. Gallium Arsenide. 1985;Wiley, New York.
3. M. Rogalla, Th. Eich, N. Evans, R. Geppert, R. Göppert, R. Irsigler, J. Ludwig, K. Runge, Th. Schmid, D. Marder, Nucl. Instr. and Meth. A 395 (1997) 49 EQ.