Carrier-carrier interaction in single In0.5Ga0.5As quantum dots at room temperature investigated by near-field scanning optical microscope

Applied Physics Letters

Volumn 83, Issue 11, 2003, Pages 2250-2252

  Matsuda, K ^a,c   Ikeda, K ^a,d   Saiki, T ^a,e   Saito, H ^b   Nishi, K ^b  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b NEC CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^e KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

CARRIER-CARRIER INTERACTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0142023875     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1609662     Document Type: Article

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