Concentration of F2 and F3+ defects in He+ implanted LiF crystals determined by optical transmission and photoluminescence measurements

Optical Materials

Volumn 24, Issue 1-2, 2003, Pages 291-296

  Bonfigli, F ^a   Jacquier, B ^b   Montereali, R M ^a   Moretti, P ^b   Mussi, V ^c,d   Nichelatti, E ^e   Somma, F ^d  

^a ENEA   (Italy)

^b UNIVERSITÉ LYON 1   (France)

^c CNR   (Italy)

^d ROMA TRE UNIVERSITY   (Italy)

^e ENEA C R CASACCIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ION IMPLANTATION; LIGHT EMISSION; LIGHT TRANSMISSION; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS;

ELECTRONIC DEFECTS;

CRYSTALS;

EID: 0141993653     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00137-X     Document Type: Conference Paper

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